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[1] Microscopic atomic structure and stability of Si-Ge solid
solutions,
A. Qteish and R. Resta, Phys. Rev. B 37. 1308 (1988).
[2] Thermodynamic properties of Si-Ge alloys,
A. Qteish and R. Resta, Phys. Rev. B 37, 6983 (1988).
[3] First-principle calculation of the Structural and
thermodynamic properties of
GaAs xSb1-x alloys,
Qteish, N. Motta and A. Balzarotti, Proc. 19th Inter. Conf. on the physics of
semiconductors, Warsaw, 1988, edited by W. Zawadzki (Institute of physics, Polish Academy
of Science, Warsaw, 1988), Vol. 2, p. 865.
[4] Ab-initio calculation of the phase-diagram and microscopic
structure of semiconductor
binary alloys,
A. Qteish and R. Resta, J. de chimie physique 86, 889 (1989).
[5] Effect of relaxation of the second-nearest neighbors on the
thermodynamic properties
of semiconducting alloys: Application to GaAsxSb1-x
A. Qteish N. Motta and A. Balzarotti, Phys. Rev. B 39, 5987 (1989)
[6] Interplanar forces and phonon spectra of strained Si and and
Ge: Ab initio
calculations and applications to Si/Ge superlattices,
A. Qteish and E. Molinari, Phys. Rev. B 42, 7090 (1990).
[7] Calculations of the electronic structure of highly strained
GaAs/GaSb/GaAs
heterostructures,
A. Qteish and R. J. Needs, Phys.Rev. B 42, 3044 (1990).
[8] Tailoring materials for quantum wells: Band offsets at
(001)-oriented
GaAs/(AlAs)n(GaAs)m interfaces,
K. Karlsson, R. J. Needs, A. Qteish and R. W. Godby, J. Phys.: condens
Matter 2,5265 (1990).
[9] Pseudopotential calculations of the valence-band offsets at
ZnSe/Ge, ZnSe/GaAs and
GaAs/Ge interfaces: Effects of the Ga and Zn 3d electrons.
A. Qteish and R. J. Needs, Phys. Rev. B 43, 4229 (1991).
[10] Combined effect of strain and confinement on the phonon
spectra of IV/IV
superlattices: towards a quantitative description,
A Fasolino, E. Molinari and A. Qteish, in Condensed systems of low
dimensionality,
Edited by J. L. Beeby et al.,(Plenum Press, New York, 1991) p. 495.
[11] Thermodynamic properties of InxGa1-xAs
alloy from total energy calculations,
N. Motta, A. Shaukat, A. Qteish and A. Balzarotti, Proc. 20th Int. Conf.
on the physics
of semiconductors, Thessaloniki, 1990, edited by E. M. Anastassakis and and J. D.
Joannopoulos (World Scientific, 1990), Vol. 3, p. 2625.
[12] On the valence band offset controversy in HgTe/CdTe
superlattices,
Qteish and R. J. Needs, J. Phys.: Condens Matter 3, 617 (1991).
[13] Polarization, band lineups, and stability of SiC polytypes,
A. Qteish, V. Heine and R. J. Needs, Phys. Rev. B 45, 6534 (1992).
[14] Improved model-solid-theory calculations for valence-band
offsets at semiconductor-semiconductor interfaces,
A. Qteish and R. J. Needs, Phys. Rev. B 45, 1317 (1992).
[15] Electronic-charge displacement around a stacking boundary
in SiC polytypes,
A. Qteish, V. Heine and R. J. Needs, Phys. Rev. B 45, 6376 (1992).
[16] First-principles calculations of the electronic properties
of silicon quantum wires,
A. J. Read, R. J. Needs, K. J. Nash, L. T. Canham, P. D. J. Calcott, and A. Qteish,
Phys. Rev. Lett. 69, 1232 (1992), and (b) Phys. Rev. Lett. 70, 2050 (1993)
(errata).
[17] Optimized and transferable nonlocal separable ab initio
pseudopotentials,
J. S. Lin, A. Qteish, M. C. Payne and V. Heine, Phys. Rev. B 47,
4174 (1993).
[18] Valence-band-offset transitivity at HgTe/CdTe, HgTe/InSb
and CdTe/InSb interfaces,
A. Qteish and R. J. Needs, Phys. Rev. B 47, 3714 (1993).
[19] Structural and electronic properties of SiC polytypes,
A. Qteish, V. Heine and R. J. Needs, Physica B 185, 366 (1993).
[20] Ab-initio pseudopotential calculations of the valence band
offset at HgTe/CdTe, HgTe/InSb and CdTe/InSb interfaces: transitivity and orientation
dependence,
A. Qteish and R. J. Needs, Computational Materials Science 2, 395
(1994).
[21] Polarization, structural and electronic properties of SiC
polytypes,
A. Qteish, R. J. Needs and V. Heine, Computational Materials Science 2,
389 (1994).
[22] A first-principles study of the electronic properties of
silicon quantum wires,
R. J. Needs, A. J. Read, K. J. Nash, S. Bhattarcharjee, A. Qteish, L. T.
Canham
and P. D. J. Calcott, Physica A 207, 411 (1994).
[23] First-principles calculations of band-edge electronic
states of silicon quantum wires,
J. Needs, S. Bhattacharjee, K. J. Nash, A. Qteish, A. J. Read, and L. T.
Canham, Phy. Rev. B 50, 14223 (1994)
[24] Ab-initio pseudopotential calculations of the band lineups
at strained ZnS/ZnSe
interfaces: including the 3d electrons of Zn as valence states,
A. Qteish, R. Said, N. Meskini, and A. Nazzal, Phys. Rev. B 52, 1830
(1995).
[25] Conjugate gradient methods for metallic systems and band
structure calculations,
A. Qteish, Phy. Rev. B 52, 14497 (1995)
[26] Transverse interplanar forces and phonon spectra of
strained Si, Ge and Si/Ge superlattices
A. Ben Amar, A. Qteish and N. Meskini, Phys. Rev. B 53, 5372
(1996).
[27] First-principles pseudopotential study of the structural
phase transformations of ZnS under high pressure,
Amjad Nazzal and A. Qteish, Phys. Rev. B 53, 8262 (1996).
[28] The band lineups at the highly strained ZnS/CdS and
ZnSe/ZnTe interfaces: Effects of
the quadratic deformation potentials and the relaxation of the semicore d-electrons
R. Said, A. Qteish and N. Meskini, J. Phys.: Condens. Matter 10,
8703 (1998).
[29] A first-principles pseudopotential study of the
compressibility of Symbole -FeSi,
Qteish, N. Shawagfeh, Solid State Communications, in press.
[30] The instability of the cinnabar phase in ZnS under high
pressure
Qteish, M. Abu-Jafar and A. Nazzal, J. Phys.: Condens. Matter 10, 5069
(1998).
[31] Computer experiments to study from a microscopic point of
view the various properties of Solids,
Qteish, Proc. of the IASTED international conference on computer systems and
applications, Irbid-Jordan. 30 March to 2 April, 1998 (ACTA press, Anaheim, 1998). P 243.
[32] Structural and electronic structure properties of B20, NaCl
and CsCl phases of FeSi,
Qteish and N. Shawagfeh, In preparation for submission to Physica B.
[33] Ab-initio calculations of the transverse and longitudinal
phonon spectra of Ge, Symbola -Sn and Symbola -Sn/Ge superlattices,
Ben Amar, A. Qteish and N. Meskini, Submitted to Phys. Rev. B.
[34] A simple method for constructing almost exact Kohn-Sham
atomic potentials,
Al-Sharif, A. Qteish and R. Resta, In preparation for to Europhysics
Letters.
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